摘要
介绍了可以在微观级对半导体界面的电学性质进行评价的两种新技术及其应用。分析了弹道电子辐射显微镜分析技术和显微光应答法技术的特点及实用性，并指出了它们所存在的局限性。
Two methods used in the microanalysis of semiconductor interfaces, Ballistic Electron Emission Microscopy (BEEM)and Scanning Internal Photoemission Microscopy (SIPM),are described. Their characteristics and practicability are analyzed. The limitation of these techniques is also pointed out.
出处
《微电子学》
CAS
CSCD
1996年第2期125-128,共4页
Microelectronics
关键词
半导体物理
半导体界面
界面分析
Semiconductor physics
Semiconductor interface
Interface characterization
BEEM
SIPM
