双栅氧CMOS工艺研究

Study of Dual Gate Oxide Technology in CMOS Process

双栅氧工艺(dualgateoxide)在高压CMOS流程中得到了广泛的应用,此项工艺可以把薄栅氧器件和厚栅氧器件集成在同一个芯片上。文章介绍了常用的两种双栅氧工艺步骤并分析了它们的优劣。在此基础上,提出了一种实现双栅氧工艺的方法。

The dual gate oxide （DGO） technology has been widely used in high-voltage CMOS process, it can integrate both thick gate oxide device and thin gate oxide device in a same chip. Two commonly used technologies are introduced and the advantages and disadvantages of them are discussed. Based on the results a new way to fabricate DGO is proposed in this paper.