摘要
采用单晶槽法研究硫酸钾晶体生长规律,考察过冷度、结晶温度、晶体粒度、添加剂对硫酸钾晶体生长的影响.通过观测硫酸钾在K2SO4-H2O体系和K+、NH4+、SO42-、Cl--H2O体系不同条件下的成核、晶体生长情况,绘制晶体生长速率曲线,确定工业条件下硫酸钾晶体生长的适宜条件,并且提出多种影响因素下硫酸钾结晶生长动力学模型.
This paper studied crystal growth rate of potassium sulfate by way of crystallizer for single crystal. The factors affecting crystal growth rate of potassium sulfate such as degree of supercooling, crystal size, temperature and additives have been investigated . Under the observation of nucleation process and crystal growth in both K2SO4-H2O and K^+ ,NH^4+ ,SO4^2- ,Cl^- -H2O systems, crystal growth curves have been drawn. The best crystal growth conditions have been obtained according to the phosphgypsum conversion manufacture technology for potassium sulfate. The crystal growth kinetics model with the influence of crystal size degree of supercooling, and crystallization temperature was given.
出处
《沈阳化工学院学报》
2005年第3期175-179,共5页
Journal of Shenyang Institute of Chemical Technolgy
关键词
硫酸钾
结晶
晶体生长速率
动力学
potassium sulfate
crystallization
crystal growth rate
kinetics potassium sulfate
crystallization
crystal growth rate
kinetics