利用高压拉曼散射研究Ge/SiO_2/Si纳米系统的压力/张力(英文)

Stress/Strain Investigation in GE/SiO_2/SI Nano-system Using High Pressure Raman Scattering

We report the pressure dependence of Ge nanocrystals embedded in SiO2 film matrix on Si substrate using Raman scattering and finite element analysis. Delamination of SiO2 film from the Si substrate occurs at ～23 kbar due to the large difference between the compressibility of the SiO2 matrix and Si substrate. The observed effect can be understood by the nonhomogeneous distribution of the elastic field in the Ge/SiO2/Si nanosystem. Previous high pressure PL results on the Si/SiO2/Si nanosystem can also be explained by the nonuniform distribution of the elastic field. Although our investigation focuses on the Ge/SiO2/Si nanosystem, our results could provide generally understanding on the elastic properties of different multi-component nanosystems.

We report the pressure dependence of Ge nanocrystals embedded in SiO2 film matrix on Si substrate using Raman scattering and finite element analysis. Delamination of SiO2 film from the Si substrate occurs at -23 kbar due to the large difference between the compressibility of the SiO2 matrix and Si substrate. The observed effect can be understood by the nonhomogeneous distribution of the elastic field in the Ge/SiO2/Si nanosystern. Previous high pressure PL results on the Si/SiO2/Si nanosystem can also be explained by the nonuniform distribution of the elastic field.