F掺杂的BN纳米管及电导特性

Fluorination and electrical conductivity of BN nanotubes

利用一种新颖的催化生长方法,在生长BN纳米管的过程中直接引入F原子,获得了均匀F掺杂的BN纳米管.高分辨透射电子显微镜研究表明,构成BN纳米管的六元环由于F掺杂而被严重扭曲,纳米管壁由一些高度卷曲的连续片层构成.电学性质测量表明,相对于无掺杂的BN纳米管而言,F掺杂BN纳米管的电导显著增加.

Barium nitride nanotubes uniformly doped with fluorine have been grown by a novel catalytic method during which the growth of the nanotubes and doping occur at the same time. Examination by high - resolution transmission electron microscopy indicates that the six-numbered BN atomic rings within the BN sheets are strongly destroyed due to the fluoridation and the walls of the nanotubes are composed of highly curled continuous BN sheets. Compared to pure BN nanotubes, the conductivity of fluoridated nanotubes is significantly enhanced, resulting in a typical heavily-doped semiconductor.