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CdSSe半导体纳米晶体的实验研究 被引量：1

Experiment Study of CdSSe Semiconductor Nanocrystal
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摘要 用共熔法在玻璃基体中退火生长了一系列不同尺寸的CdSSe半导体纳米晶体,并比较和分析了一步法和两步法.两步退火法增加纳米晶体的数目,在一定程度上提高了纳米晶体尺寸分布.根据纳米晶体的室温吸收光谱,用有效质量近似模型估算了纳米晶体的平均尺寸在2.25～2.58 nm之间. A series of CdSSe semiconductor nanocrystals with different sizes have been produced on the glass matrix by the eutectic method. One-step method and two-step method are also compared and analyzed. It has shown that two-step procedure could increase the number of nanocrystals, and improve the size distribution to a certain extent. According to the room-temperature absorption spectra we have calculated the mean size of sample, ranging from 2.25 to 2.58 nm by means of effect-mass approximation model.
作者 黄平 颜其礼
机构地区 四川师范大学物理与电子工程学院.固体物理所
出处 《四川师范大学学报（自然科学版）》 CAS CSCD 北大核心 2005年第6期680-682,共3页 Journal of Sichuan Normal University（Natural Science）
关键词 CdSSe 半导体纳米晶体 退火 CdSSe Semiconductor nanocrystals Annealing
分类号 TN304.26 [电子电信—物理电子学]
  • 相关文献

参考文献9

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共引文献8

同被引文献24

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引证文献1

二级引证文献2

四川师范大学学报（自然科学版）
2005年 第6期

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