摘要
The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(～1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.
The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal DSi = DGe = 5 nm, the retention time of this device can reach ten years（-1 × 10^8 s） while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage ｜ Vg ｜ = 3 V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.
基金
ScienceFoundationofHunanUniversity(521101805)
