电感耦合等离子体原子发射光谱法同时测定纯硅中硼等13个杂质元素

ICP-AES DETERMINATION OF 13 IMPURITY ELEMENTS IN PURE SILICON

研究了纯硅中微量和痕量杂质元素铝、钙、铁、锰、磷、铬、铜、镍、钛、钒、锆、砷和硼等电感耦合等离子体原子发射光谱（ICP—AES）的同时测定方法，样品以硝酸、盐酸和氢氟酸挥硅处理方法，在样品处理过程中，加入适量的甘露醇能够抑制硼的挥发。在优化选定的仪器条件和介质中测定纯硅样品和纯硅标准样品。纯硅样品中13个杂质元素的回收率均在92．0％～105．09／6之间，相对标准偏差均小于5．0％。

A study on the ICP-AES determination of 13 impurity elements in pure silicon was made and a method of determination was described in this paper. The silicon sample was dissolved in nitric acid and hydrofluoric acid under heating, and an appropriate amount of mannitol was added to protect boron, phosphorus and arsenic from volatilization. Silicon was expelled by evaporation and the solution was finally taken up by HC1. The interferences of co-existing elements were studied and suitable medium of analysis and working conditions of the spectrometer were optimized. Feasibility of the proposed method was evaluated by its application to the analysis of a certified reference material （SRM 57a）, and the results obtained were in consistency with the certified values. RSD＇s （n= 11） obtained in the analysis of all these elements were found to be less than 5.0% and recoveries tested were in the range from 92. 0% to 105.0%.