锗对重掺硼直拉硅中氧沉淀的影响

Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

通过单步长时间退火（650～1150℃／64h）和低高两步退火（650℃／16h＋1000℃／16h和800℃／4～128h＋1000℃／16h），研究锗对重掺硼硅（HB-Si）中氧沉淀的影响．实验结果表明，经过退火后，掺锗的重掺硼硅中与氧沉淀相关的体微缺陷密度要远远低于一般的重掺硼硅，这表明锗的掺人抑制了重掺硼硅中氧沉淀的生成，并对相关的机制做了初步探讨．

Oxygen precipitation in conventional heavily B-doped Czochralski （CZ） silicon （HB-Si） and heavily Ge-B codoped CZ silicon （Ge codoped HB-Si） subjected to single step annealing at 650-1150℃ for 64h or low-high two step annealing（650℃/ 16h q- 1000 ℃ /16 h and 800 ℃/4 - 128 h ＋ 1000 ℃ /16 h） are comparatively investigated. It is found that the density of bulk microdefects （BMDs） in Ge codoped HB-Si is much lower than that in HB-Si. The mechanism of which is preliminarily discussed.