摘要
为了验证SiGe多量子阱的能带向直接带隙结构转变[1]和进一步探索其在热光电池领域的应用,采用先进的超高真空化学气相沉积系统生长出高质量的SiGe多量子阱外延层,并对其进行多次反射红外线吸收谱的测量.测量结果说明吸收峰接近黑体辐射峰1450nm波长,跃迁几率有所增加,这将大幅度提高热光电池的吸收效率,同时也为SiGe多量子阱中量子效应的存在提供了实验依据.
To verify the direct-gap transition of a SiGe multi-quantum well and grope for its application in thermophotovoltaic cells,a high quality SiGe multi-quantum well is grown by our UHV-CVD Ⅱ system. The absorption measurement of the SiGe multi-quantum well by multiple internal reflection indicates that the extension of the absorption is up to 1450nm and transition probability caused by the quantum effect in the quantum well of strained SiGe thin layer is higher. Consequently, the absorption efficiency of thermophotovoltaic cells will be increased significantly.
基金
国家科技部攀登项目
浙江省计划项目(批准号:981101040
991110535)资助~~
关键词
多量子阱
窄带隙
热光电池
UHV—CVD
黑体辐射
multi-quantum well
low bandgap
thermophotovoltaic cells
UHV-CVD
blackbody radiation
