期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种采用开关阶跃电容的压控振荡器(下):电路设计和实现 被引量：3

A LC Voltage-Controlled Oscillator Tuned by Switched Step Capacitors:Part Ⅱ,Circuit Design and Implementation
下载PDF
导出
摘要 为了验证阶跃可变电容压控振荡器调谐特性理论分析的正确性,提出了一种采用开关阶跃电容的新型压控振荡器电路,该压控振荡器电路采用0·25μm1P5MCMOS工艺实现.一种新型开关阶跃电容实现了频率调谐功能,该电容的调谐电容是传统反型MOS管可变电容的146%.在1/f3区域,差分调谐振荡器的相位噪声比单端调谐振荡器低7dB.在载波频率偏差10kHz,100kHz和1MHz处测得差分调谐时的相位噪声分别是-83,-107和-130dBc/Hz,功耗为8·6mW. A novel LC oscillator differentially tuned by switched step capacitors, which is implemented in a CMOS 0.25μm 1P4M CMOS process,is proposed to verify our theoretical analysis of tuning characteristics. The tuning capacitance of the proposed switched step capacitors is 146 % of the conventional inversion-MOS varactors＇. In the 1/f^3 region, the novel differentially tuned topology has 7dB phase noise reduction compared to the single-ended tuned topology. The implemented VCO at 1. 013GHz has a phase noise of -83, - 107, and - 130dBc/Hz,at a 10kHz, 100kHz, and 1MHz offset, respectively. Power consumption is 8.6roW.
作者 唐长文 何捷 闵昊
机构地区 复旦大学专用集成电路与系统国家重点实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第11期2182-2190,共9页 半导体学报（英文版）
基金 上海市科学技术委员会(批准号:037062019) 上海市应用材料研究与发展基金(批准号:0425)资助项目~~
关键词 阶跃可变电容 MOS管可变电容 开关阶跃电容 电感电容压控振荡器 振荡调谐曲线 周期计算技术 EEACC:1230B step capacitors MOS varactors switched step capacitors voltage-controlled oscillator oscillator tuning curves period calculation technique
分类号 TN752 [电子电信—电路与系统]
  • 相关文献

参考文献8

  • 1唐长文,何捷,闵昊.一种采用开关阶跃电容的压控振荡器(上):调谐特性的理论分析[J].Journal of Semiconductors,2005,26(10):2010-2021. 被引量：3
  • 2Kral A, Behbahani F, Abidi A. RF-CMOS oscillators with switched tuning. IEEE Custom Integrated Circuits Conf,1998:555.
  • 3Niknejad A M. Multi-mode and wideband VCO design. RF-IC2003.
  • 4Niknejad A M, Meyer R G. Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's. IEEE J Solid-State Circuits, 1998,33(10): 1470.
  • 5Maget J. Varactors and inductors for integrated RF circuits in standard MOS technologies. PhD Dissertation, the University of Bundeswehr Munich,Germany, 2002.
  • 6ASITIC Website:http://rfic.eecs.berkeley.edu/-niknejad/asitic.html.
  • 7Hegazi E,Sjoland H,Abidi A. A filtering techniques to lower LC oscillator phase noise. IEEE J Solid-State Circuits, 2001,36(12):1921.
  • 8Fong N H W,Plouchart J O,Zamdmer N,et al. A 1-V 3.8-5.7-GHz wide-band VCO with differential tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI Technology. IEEE Trans Microw Theory Tech,2003,51(8):1952.

二级参考文献15

  • 1唐长文,何捷,闵昊.一种采用开关阶跃电容的压控振荡器(下):电路设计和实现[J].Journal of Semiconductors,2005,26(11):2182-2190. 被引量：3
  • 2Craninckx J,Steyaert M.A 1.8-GHz CMOS low-phase-noise voltage-controlled oscillator with prescaler.IEEE J SolidState Circuits,1995,30(13):1474.
  • 3Craninckx J,Steyaert M.A 1.8-GHz low-phase noise CMOS VCO using optimized hollow spiral inductors.IEEE J SolidState Circuits,1997,32(5):736.
  • 4Kral A,Behbahani F,Abidi A A.RF-CMOS oscillators with switched tuning.Proc IEEE Custom Integrated Circuits Conf,Santa Clara,CA,1998:555.
  • 5Andreani P,Mattisson S.On the use of MOS varactors in RF VCO's.IEEE J Solid-State Circuits,2000,35(6):905.
  • 6Svelto F,Erratico P,Manzini S,et al.A metal-oxide-semiconductor varactor.IEEE Electron Device Lett,1999,20(4):164.
  • 7Tiebout M.Low-power low-phase-noise differentially tuned quadrature VCO design in standard CMOS.IEEE J SolidState Circuits,2001,36(7):1018.
  • 8Levantino S,Samori C,Zanchi A,et al.AM-to-PM conversion in varactor-tuned oscillator.IEEE Trans Circuits Syst-Ⅱ,Analog and Digital Signal Processing,2002,49(7):509.
  • 9Levantino S,Samori C,Bonfanti A,et al.Frequency dependence on bias current in 5-GHz CMOS VCOs:Impact on tuning range and flicker noise upconversion.IEEE J Solid-State Circuits,2002,37(8):1003.
  • 10Hegazi E,Abidi A.Varactor characteristics,oscillator tuning curves,and AM-FM conversion.IEEEJ Solid-State Circuits,2003,38(6):1033.

同被引文献22

  • 1黄水龙,王志华.CMOS分数频率综合器设计技术[J].微电子学,2005,35(4):394-399. 被引量：5
  • 2黄水龙,王志华,马槐楠.一个自调谐,自适应的1.9GHz分数/整数频率综合器[J].电子学报,2006,34(5):769-773. 被引量：5
  • 3ANDREANI P, SJOLAND H. Tail current noise suppression in RF CMOS VCOs [J]. IEEE J Sol Sta Circ, 2002, 37(3): 342-348.
  • 4KIM J, SHIN J, KIM S, et al. A wide-band CMOS LC VCO with linearized coarse tuning characteristics [J]. IEEE Trans Circ Syst, 2008, 55(5) : 399-403.
  • 5YUN S J, SHIN S B, CHOI H C, et al. A 1 mW current-reuse CMOS differential LC-VCO with low phase noise [C] // IEEE Int Sol Sta Cite Conf. San Francisco, CA, USA. 2005: 540-616.
  • 6BUNCH R L, RAMAN S. Large-signal analysis of MOS varactors in CMOS Gm LC VCOs[J]. IEEE J Sol Sta Circ, 2003, 38(8) :1325-1332.
  • 7SADAT A, LIU Y, YU C, et al. Analysis and modeling of LC oscillator reliability[J]. IEEE Trans Dev Mater Reliab, 2005, 5(1): 119-126.
  • 8KAO Y H, HSU M T, HSU M C, et al. A systematic approach for low phase noise CMOS VCO design [J]. IEICE Trans Elec, 2003, 86(8): 1427- 1432.
  • 9Craninckx J,Steyaert M.A 1.8-GHz CMOS low-phase-noise voltage-controlled oscillator with prescaler.IEEE J SolidState Circuits,1995,30(13):1474.
  • 10Craninckx J,Steyaert M.A 1.8-GHz low-phase noise CMOS VCO using optimized hollow spiral inductors.IEEE J SolidState Circuits,1997,32(5):736.

引证文献3

二级引证文献8

Journal of Semiconductors
2005年 第11期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部