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一种新型的CMOS温度传感器 被引量：7

A New Type of CMOS Temperature Sensor
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摘要 提出了一种采用标准CMOS工艺制造的全CMOS电路结构温度传感器的理论及其电路设计．采用CSMC0．6μm的数模混合工艺仿真，结果表明该传感器在-40～125℃的温度范围内，温度灵敏度为-1·15μA／℃·芯片实测，温度灵敏度为-0．99μA／℃．5V供电时，静态功耗为1．5mW，芯片面积为0．025mm^2．该传感器的特性表明它非常适用于高容量的集成微系统，在汽车电子、石油采集、生物医学等领域有着广阔的应用前景． Theory and design of compatible wide range smart temperature sensors in standard CMOS technology is presented. The simulated temperature sensitivity using a CSMC 0.6μm mixed-signal CMOS process is -1. 15μA/℃ （over the temperature range of -40-125℃） and the measured is -0.99μA/℃. The power dissipation of the sensor is 1. 5mW at a 5V voltage supply,and the chip area is 0. 025mm^2. The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as automotive, oil prospecting, biomedical, and consumer.
作者 张洵 王鹏 靳东明
机构地区 清华大学微电子学研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第11期2202-2207,共6页 半导体学报（英文版）
关键词 集成电路 温度传感器 温度系数 integrated circuits temperature sensor temperature coefficient
分类号 TP212.1 [自动化与计算机技术—检测技术与自动化装置]
  • 相关文献

参考文献16

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共引文献4

同被引文献71

  • 1张洵,靳东明,刘理天.半导体温度传感器研究进展综述[J].传感器与微系统,2006,25(3):1-3. 被引量：7
  • 2林赛华,杨华中.新型全CMOS片上温度传感器设计[J].Journal of Semiconductors,2006,27(3):551-555. 被引量：9
  • 3张艳红,刘兵武,刘理天,张兆华,谭智敏,林惠旺.一种新型硅基厚膜压力/温度传感器的设计和制作[J].传感技术学报,2006,19(6):2376-2379. 被引量：6
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  • 10Pertijs M, Makinwa K, Huijsing H. A CMOSSmart Temperature Sensor With a 3crInaccuracy of 0.1 ℃ From 55 ℃ to 125 ℃ [ J].IEEE, J. Solid-State Circuit, 2005,40 ( 12 ) : 2805 -2815.

引证文献7

二级引证文献21

Journal of Semiconductors
2005年 第11期

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