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硅基CoZrO铁氧体磁膜结构RF集成微电感 被引量:3

A RF Integrated Inductor with CoZrO Ferrite Thin Film
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摘要 制作了一种新型磁膜结构射频集成微电感.该电感使用溶胶-凝胶法制备的CoZrO铁氧体作为磁性薄膜;采用平面单匝形式的金属线圈,从而形成“SiO2绝缘层/磁膜层(CoZrO)/SiO2绝缘层/Cu线圈”的结构,具有结构简单、制作工艺与常规集成工艺兼容等特点.同时,采用相同工艺同批制作了无磁膜微电感作为对比样品,并取各项结构参数与磁膜电感相一致.测试结果表明,2GHz处,磁膜结构微电感的感值(L)为1·75nH、品质因数(Q)为18·5,与无磁膜微电感相比,L和Q的值分别提高了25%和23%. A novel RF integrated inductor with ferrite thin-film is fabricated. The inductor has a simple structure of “SiO2 insulating layer/magnetic thin-film(CoZrO)/SiO2 insulating layer/Cu coils”, in which a planar single-turn metal coil and a CoZrO ferrite thin-film fabricated by the Sol-Gel method are used. The fabrication process is compatible with standard integrated process. Inductors without the magnetic thin-film are fabricated as the referential sample using the same processes,in which the structure parameters are consistent with the inductor with magnetic thin-film. The inductance(L) of the inductor with magnetic thin-film is 1.75nH and the quality factor(Q) is 18. 5 at 2GHz. Compared with the inductor without magnetic thin-film,L and Q are raised by 25 % and 23 %, respectively.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第11期2208-2212,共5页 半导体学报(英文版)
基金 美国自然科学基金资助项目(批准号:0302449)~~
关键词 CoZrO铁氧体 磁膜结构 射频集成 CoZrO ferrite magnetic thin-film RF integration
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参考文献14

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共引文献4

同被引文献35

  • 1冯则坤,何华辉.纳米磁性颗粒膜研究进展[J].磁性材料及器件,2005,36(5):17-21. 被引量:5
  • 2高孝裕,周勇,雷冲,陈吉安,倪智平,毛海平,王志民.MEMS磁芯螺线管微电感的制作工艺研究[J].固体电子学研究与进展,2005,25(4):513-516. 被引量:5
  • 3任天令,杨晨,刘锋,刘理天,王自惠,张筱.Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film[J].Journal of Semiconductors,2006,27(3):511-515. 被引量:1
  • 4杨晨,刘锋,任天令,刘理天.面向RFIC的片上铁氧体磁膜电感[J].传感技术学报,2006,19(05B):1930-1933. 被引量:1
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  • 10Huo Xiao,Chen Kevin J,Chan P C.High-Q inductors on standard silicon substrate with low K BCB dielectric layer[J].IEEE MTTS Digest,2002(1):403-406.

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