离子束辅助沉积铪膜抑制栅电子发射性能研究

Electron emission suppression characteristic of molybdenum grid coated with Hf by ion beam assisted deposition

利用离子束辅助沉积(IBAD)方法在Mo栅极表面沉积铪膜,采用模拟二极管方法测量和比较阴极活性物质Ba、BaO蒸发在镀铪和纯钼栅极表面的电子发射性能。实验结果表明,镀铪栅极抑制电子发射性能较好,并初步探讨了离子束辅助沉积铪膜抑制栅电子发射的机理。

Hf was deposited onto molybdenum-grids by ion beam assisted deposition （IBAD） method. Electron emission characteristics from molybdenum-grids coated with and without Hf contaminated by active electron-emission substance of the cathode were measured using the analogous diode method. The results show that electron emission from the grids coated with Hf film is less than that without Hf film,and the mechanism for suppression of electron emission of the grid with Hf film was discussed.