Multilayered structures InSb_(1-x)Bi_x/InSb-materials for infrared photodetectors
Multilayered structures InSb_(1-x)Bi_x/InSb-materials for infrared photodetectors
出处
《广东有色金属学报》
2005年第2期344-344,共1页
Journal of Guangdong Non-Ferrous Metals
参考文献1
-
1L. S. Lunin, M. L. Lunina, A.V. Blagin Avalanche photodiodes on the base of InSbBi-InSb superlattice./Proc. Of VII International con[erence " Actual problems of solid state electronics and microelectronics". Divnomorskoe,Russia, 2000, V.2. P.172.
-
1PaulKish.重新认识BIX[J].电信工程技术与标准化,2000,13(4):51-51.
-
2重新认识BIX[J].计算机网络世界,2000(6):41-42.
-
3QIU WeiCheng,HU WeiDa.Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors[J].Science China(Physics,Mechanics & Astronomy),2015,58(2):1-13. 被引量：15
-
4G.E.Weng,A.K.Ling,X.Q.Lv,J.Y.Zhang,B.P.Zhang.III-Nitride-Based Quantum Dots and Their Optoelectronic Applications[J].Nano-Micro Letters,2011,3(3):200-207.
-
5H.Barickaby,A.Zarifkar,M.H.Sheikhi.A new approach for modeling of dark current characteris-tics of quantum wire infrared photodetectors[J].Optoelectronics Letters,2011,7(4):260-262.
-
6王庆伟,芦廷峰,国佳,李秀梅,纪建业,刘博.Synthesis, Crystal Structure and Photoluminescent Property of a Three-dimensional Zinc(Ⅱ) Coordination Polymer: [Zn_1.5(PDB)(bix)_0.5(μ_2-OH)]_(2n)[J].Chinese Journal of Structural Chemistry,2013,32(1):137-141. 被引量：3
-
7红外技术及器件[J].中国光学,1998(4):78-81.
-
8齐军,王昆林,梁绵长,朱允明,方鸣岗,虞孝舜.InSb的激光划片研究[J].激光与红外,1999,29(2):88-91.
-
9孟庆端,吕衍秋,鲁正雄,孙维国.InSb红外焦平面探测器结构应力的ANSYS分析[J].红外与毫米波学报,2010,29(6):431-434. 被引量：21
-
10新型红外光探测器实现性能升级[J].机床与液压,2016,44(10):18-18.
