低介电常数介质薄膜的研究进展

The Development of Low Dielectric Constant Films

用低介电常数介质薄膜作金属线间和层间介质可以降低超大规模集成电路(ULSI)的互连延迟、串扰和能耗。从介质极化的原理出发,揭示了开发低介电常数介质薄膜的可能途径;综述了低介电常数介质薄膜的制备方法、结构与性能表征、工艺兼容性等领域的最新进展。

Low dielectric constant （low k ） films used as intermetal or interlevel dielectrics can minimize interconnect resistance/capacitance （RC） delay, power consumption and cross talk of ULSI. The possible ways to lower the k values of dielectric films are revealed based on analysis of molecule polarization. The synthesis, structure, properties and process interaction of low k dielectrics are reviewed. Characterization techniques for low k dielectric films are summarized.