薄膜生长过程中孔洞填充的蒙特卡罗模拟

Monte Carlo Simulation of Pin-Hole Filling in Film Growth

在一般的材料生长过程中,由于某些实验参数控制不当,比如生长过程中过高的沉积速率会导致局部的材料中出现孔洞,这种孔洞严重影响了薄膜材料的性能。本文以铜薄膜为例,利用动力学晶格蒙特卡罗方法,模拟了不同参数条件下对孔洞缺陷的影响。所研究的实验参数有:入射截止角、衬底温度和沉积速率。模拟结果表明:孔洞缺陷填充质量的好坏与实验参数有很大的关系。适当的参数有利于孔洞缺陷的完全填充,并且能避免孔洞内再次形成空洞。因此,可以通过优化工作参数来改善薄膜材料的质量,从而提高薄膜材料的性能。

Monte Carlo simulation of the pin-hole filling in copper film growth under different conditions was performed to improve the film quality. Key parameters used in the simulation include cut-off angle of the incident particles, substrate temperature, and deposition rate. The results show that pin-hole filling depends on critical cut-off angle of incident particle,sufficiently high substrate temperature and an appropriate deposition rate. Optimization of these parameters may completely fill the pin-holes, avoid formation of void and improve the film quality.