溅射靶功率对氮化碳薄膜结构的影响

Influence of Sputtering Power on Microstructure of Carbon Nitride Films

利用双放电腔微波ECR等离子体增强非平衡磁控溅射技术,在Si(100)上制备氮化碳薄膜,并对薄膜进行了拉曼(Raman)、原子力显微镜(AFM)、X射线光电子谱(XPS)等结构的表征。发现溅射靶功率对制膜工艺、薄膜的结构和表面形貌产生很大影响。随着溅射靶功率的增大,薄膜的沉积速率减小,表面粗糙度增大,薄膜结构中的sp2含量增加。

Carbon nitride films were grown on Si（100） wafer by twin-microwave, electron-cyclotron-resonance （ECR） plasma source enhanced,unbalance magnetron sputtering. The films were characterized with Raman spectroscopy, X-ray photoelectron spectroscopy （XPS）,and atomic force microscopy （AFM）.The results show that the sputtering power significantly affects its microstructures,its stoichiometry and its surface morphology. For instance,as the sputtering power increases the deposition rate decreases,the film surface roughens and sp^2 eontent rises up.Moreover, high sputtering power induces a transformation from sp^3 C-N to sp^2 C-N,which results in eonsiderable density decrease of sp^3 C-N.