摘要
中子嬗变掺杂直拉硅单晶(NTDCZSi)在1050～1100℃6h退火时,体内产生以较大辐照缺陷为核心的氧沉淀和衍生的二次缺陷.光致发光(PL)在0.76～1.000eV范围出现了PL峰,而非中照的CZSi在相同条件下退火却没有检测出明显的PL峰.本文与已发表过的文献进行了比较,初步认定本实验条件下出现的0.896eV、0.765eV、0.909eV、0.773eV是中照硅退火时由于产生了氧沉淀及其衍生的二次缺陷引入的深能级缺陷PL峰.
The oxygen precipitation taking the larger irradiation defects as nuclei and the induced defects can be produced in NTDCZSi bulk during annealing at 1050-1100℃ for six hours. PL peaks ranging from 0. 76 to 1. 000eV appeared, but no PL peaks appeared in CZSi at the same annealing condition. In this experimental condition, the PL peaks at 0. 896eV, 0. 765eV, 0. 909eV and 0. 773eV respectively are concerned with deep level defects produced during annealing NTDCZSi, which induced by the oxgen precipitation and the induced defects.
基金
国家自然科学基金资助项目
关键词
中子嬗变掺杂
直拉硅
光致发光
二次缺陷
Neutron transmutation doping (NTD), CZSi, PL, Secondary defect
