半导体材料与器件九十年代最新进展

The new advance of semiconductor materials and devices during the nineties

本文分别从单晶的尺寸、质量、新型器件、微加工及其集成度和性能几方面报导半导体材料与器件九十年代的世界水平.

This paper is presented for the world development level of semiconductors and devices during the nineties to report the monocrystal sizes, quality, new type of devices, micromechanic fabrications, integarities and properties.