氢化非晶硅局域态电荷密度的解析统一模型

An Analytic Unified Model of Trapped Charge in a-Si: H

本文发展了一种简明的氢化非晶硅（a－Si：H）局域态电荷密度统一模型。从a－Si材料的带隙态密度适配参数分布函数出发，采用Shockley－Read－Hall统计描述，推导出了局域态电荷密度统一的解析表达式，该模型同时考虑了带尾局域态和缺陷局域态的作用。最后将该解析模型与现有的发表结果进行了比较，并由此分析了非晶硅场效应晶体管的迁移率。这种模型是研究非晶硅中的电荷俘获过程及非晶硅器件（如a－Si：HTFT）特性的必要基础。

A simple analytic model of trapped charge in a-Si: H is presented. Based on an advanced distribution model of gap states in a-Si: H, a model for the density of localized trapped charge is developed considering defect and tail localized states simultaneously. This is neeessary to understand the behavior of amorphous silicon devices as their characteristics are largely determined by the high concentration of charge trapped by the localized states in the band gap. Such a model is useful as an aid in exploring the nature of the charge-trapping process and for the efficient simulation of amorphous silicon devices such as a-Si: H TFT' s.