摘要
寿命试验和噪声测试结果表明,如果集成运算放大器的主要失效模式是输入偏置电流或失调电流随时间的漂移,则这种漂移量与运放的1/f噪声电流具有强相关性,二者近似呈正比关系。理论分析表明,这种漂移可归因于作为1/f噪声直接起源的氧化层陷阱对硅中电子的慢俘获作用。据此,提出了通过1/f噪声测量对集成运放特定参数时漂进行快速无损评估的方法。
It is shown from the accelerated lifetime test and noise measurement for integrated operational amplifiers that if their failure is caused by the drift of input bias current or input offset current, the drift is strongly correlated with 1/f noise current in these devices, and both are proportional approximately. In the mechanism analysis, the drift may be attributed to the slow capture effect of oxide traps, which are 1/f noise sources, on the electrons in silicon. Therefore, 1/f noise measurement can be used as a fast and non-destructive tool to evaluate the long term instability of integrated operational amplifiers.
基金
电子部攻关科研项目
