掺杂聚乙烯咔唑的有机二极管的伏安特性

CURRENT-VOLTAGE CHARACTERISTICS OF ORGANIC DIODE DOPED WITH POLY-(N-VINYLCARBAZOLE)

本文提出了一种掺杂具有空穴导电特性的聚合物来改变有机二极管伏安特性的新方法。在导电玻璃上利用甩胶法分别制得两类有机薄膜层:聚烷基噻吩和掺杂不同量聚乙烯咔唑的聚烷基噻吩。将铝沉积在这些有机薄膜上作为有机二极管的负极。实验发现,掺杂聚合物的有机二极管电流电压非线性特性得到增强,经幂函数曲线拟合,若掺杂量适中,幂指数存在着一个最大值。

A new method was presented to improve organic diode current-voltage (I-V) characteristics by using doped p-type material. The organic diodes with one-layer poly-(3-alkylthiophene) (PAn=8T) and PAn=8T doped with various amounts of poly-(N-vinylcarbazole) (PVK) (Pan=8T/PVK) sandwiched between an indium/tin oxide (ITO) and an aluminium cathode were fabricated by spin coating onto ITO respectively. It was found that the I-V characterisitcs were improved by doping with PVK in PAn=gT diode, and it was known that the exponent of the fitting equation has a maximum value by the best fit power curve if the doped PVK amount is moderate.