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Binding energy of donors in symmetric triangular quantum wells

Binding energy of donors in symmetric triangular quantum wells
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摘要 Hydrogen-like donor impurity states in symmetric triangular quantum wells are investigated by using a variational method.Both the effects of the variable effective mass of electrons and the spatially dependent dielectric constant are considered in the calculation.The numerical results show that the binding energy depends on not only the effective mass and dielectric constant but also the spatial distribution of electron probability density.The binding energies of donor states get the maximums at the well-center.The results are also compared with those obtained in parabolic and square wells.It is seen that the triangular well support the highest binding energies for donor states.
机构地区 Department of Physics
出处 《Optoelectronics Letters》 EI 2005年第2期88-91,共4页 光电子快报(英文版)
基金 Supported by the National Natural Science Foundation of Chin(10164003)
关键词 半导体技术 晶体 取向附生 对称性 概率密度 半导体技术 晶体 取向附生 对称性 概率密度
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