摘要
介绍了电子显微镜和二次离子质谱仪(SIMS)两种当前主要的微分析工具在四元InGaAlP发光二极管(LED)外延片分析过程中的应用,讨论了它们各自的适用领域,指出两者有机的结合可以得到比较全面的分析结果,为工艺监控和工艺改进提供了参考。
Applications of electron microscopy and secondary ion mass spectroscopy （SIMS） in analyzing the InGaA1P epitaxy wafer of LED were introduced. The application areas were discussed. A comprehensive result in the epitaxy wafer microanalysis by combining the two methods was obtained, and references to the process monitor and control are given.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第12期32-34,共3页
Semiconductor Technology
