摘要
报道了蓝宝石衬底、栅长为0.3μm AlGaN/GaN HEMT器件的制备,在未采用散热设备的条件下测得栅宽为100μm器件的饱和电流为55.9mA,最大源漏电流为92.1mA。对器件的跨导特性进行了对比,得到最大跨导为306mS/mm的器件。同时对器件进行了微波小信号测试,推导出截止频率fT和最高振荡频率fmax分别为18.5GHz和46GHz。
The fabrication of HEMT of AlGaN/GaN heterostructures grown on sapphire substrate is reported. Without any heat dissipation equipments, gate-length 0.3μm and gate-width 100μm devices exhibit excellent DC characteristics, saturated current is 55.9mA, maximal current is 92. 1mA. The transconductance characteristics is discussed, and the maximal transconductance of 306mS/mm is gotten. The cutoff frequency（fT） is 18.5GHz and the maximum frequency of oscillation（fmax）is 46GHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第12期49-51,56,共4页
Semiconductor Technology
基金
国家973项目(51327030201
51327030402)
