摘要
介绍了X波段功率单片放大器的设计、制造、测试等技术,以及器件的大信号模型的建立。X波段功率单片放大器采用两级放大,经过功率分配和功率合成,输入输出匹配为50Ω,单片性能达到输出功率≥5W,附加效率≥33%,功率增益≥13.5dB,增益波动≤0.3dB,输入驻波比≤2?1。
The design, fabrication and performance of a newly developed two-stage X-band MMIC power amplifiers are described, including the big signal model extracting. The terminals of input and output were matched to 50Ω, The chips of MMIC were fabricated and its RF measurements are Pout ≥5W, ηadd ≥33%, △Gp≥13.5dB, Gp≤±0.3dB, VSWRin≤2：1.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第12期60-62,共3页
Semiconductor Technology
基金
国防科技重点实验室基金项目(51433050103DZ230
51432050103DZ2301)
