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低电压低功耗带通Sigma Delta调制器的设计 被引量：3

The Design of Low Voltage Low Power Bandpass Sigma Delta Modulator
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摘要 本文设计了一种符合双标准接收机要求的一位四阶带通调制器.为了实现低电压低功耗设计的要求,改进了调制器结构,并进行了从系统到电路模块的优化.采用0.35μm CMOS工艺,Hspice和Matlab联合模拟表明:在2V电源电压下,调制器在GSM和WCDMA系统中的DR分别为86dB和36dB,而功耗仅为10.5mW和12mW. This paper presented a single-bit fourth-order sigma delta modulator for dual-standard receiver. The low voltage and low power target is attained by improving the modulator structure and optimizing from system to circuit blocks. Hspice and Matlab cosimulation with 0.35μm CMOS technology indates that dynamic range is 86dB for GSM, 36dB for WCDMA respectively and power dissipation is only 10.SmW and 12mW with 2V power supply.
作者 程剑平 朱卓娅 魏同立
机构地区 东南大学微电子中心
出处 《电子学报》 EI CAS CSCD 北大核心 2005年第11期2051-2055,共5页 Acta Electronica Sinica
关键词 带通∑Δ调制 低功耗 低电压运放 自举开关 bandpass sigma delta modulation low power low voltage operational amplifier bootstraped switch
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献14

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同被引文献23

  • 1李志忠,丘水生,张黎.混沌频率调制增强开关变换器EMC的研究[J].电子学报,2005,33(11):1983-1987. 被引量：3
  • 2冯晖,秦毅男,林争辉.D类功放中全数字PWM结构的非线性误差校正方法[J].电子学报,2007,35(8):1442-1445. 被引量：10
  • 3Fujimoto Y,Re P L,Miyamoto M.A delta-sigma modulator for a 1-bit digital switching amplifier [J].IEEE Journal on Solid-State Circuits,2005,40(9):1865-1871.
  • 4Hung T P,Rode J,Larson L E,et al.Design of H-bridge class-D power amplifiers for digital pulse modulation transmitters [J].IEEE Transactions on Microwave and Techniques,2007,55(12):2845-2855.
  • 5Johnson T,Stapleton S P.RF class-D amplification with bandpass sigma-delta modulator drive signals [J].IEEE Transactions on Circuits and System,2006,53(12):2507-2519.
  • 6Richelli Anna. Increasing EMI immunity in novel low-voltage CMOS opamps [ J ]. IEEE. Transactions on Electromagnetic Compatibility, 2012,54(4) :947 - 950.
  • 7Nicolelis M. Actions from thoughts[ J]. Nature, 2001,409 ( 1 ) : 403-407.
  • 8Hongge Li, Qicheng Xu. Sub-threshold-based Mira-low-power neural spike detector[ J ]. Electronics Letters, 2011,47 (6) : 367 - 368.
  • 9Zuo L, Islam S K. Low-voltage bulk-driven operational amplifi- er with improved lransconductance [ J ]. IEEE Transactions on Circuits and Systems, 2013, 160 ( 8 ) : 2084 - 2091.
  • 10Redoute J M, Steyaert M. EMI-resistant CMOS differential in- put stages [ J ]. IEEE Transactions on Circuits and Systea-o_s, 2010,157(2) :323 - 331.

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电子学报
2005年 第11期

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