Kovar封装CMOS器件X射线剂量增强效应研究

Dose enhancement effect research of X-ray for Kovar-lidded CMOS devices

在器件的金属化层及封装等结构中,高原子序数材料在低能X射线的辐照下,会在相邻的低原子序数材料中产生剂量增强效应,从而使得器件性能严重退化。主要介绍了柯伐封装的CMOS器件,在X射线和γ射线辐照下,其辐照敏感参数阈值电压和漏电流随总剂量的变化关系。并对实验结果进行了比较,得出低能X射线辐照对器件损伤程度大于γ射线,对剂量增强效应进行了有益的探讨。

High atomic number material of device can produce dose-enhancement effects to next low atomic number material in metallized layer and encapsulation structures irradiated with low-energy X- ray. So device performance degenerates badly. The irradiation sensitive parameter threshold voltage and leakage current of Kovar-lidded CMOS devices irradiated with X-ray and γ-ray are evaluated asa function of irradiation total dose ,and experiment results are compared. It is concluded that the induceddamages of x-ray are more serious than those of γ-ray. Dose-enhancement effects are valuably discussed.