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Effect of Seed Layer on the Orientation of Zinc Oxide Film on Silicon Substrate

Effect of Seed Layer on the Orientation of Zinc Oxide Film on Silicon Substrate
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摘要 The effect of seed layer on the orientation of ZnO film was investigated. Before the preparation of ZnO film using sol-gel method, seed layer of ZnO was prepared in a similar way using the precursor at a rather low concentration. Experiments show that the existence of seed layer can improve the orientation of the finally prepared ZnO film, while baking temperature, baking time and precursor concentration all have effects on the final results. The effect of seed layer on the orientation of ZnO film was investigated. Before the preparation of ZnO film using sol-gel method, seed layer of ZnO was prepared in a similar way using the precursor at a rather low concentration. Experiments show that the existence of seed layer can improve the orientation of the finally prepared ZnO film, while baking temperature, baking time and precursor concentration all have effects on the final results.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2005年第6期887-890,共4页 材料科学技术(英文版)
基金 supported by the National Natural Science Foundation of China under grant No.50402011 Tianjin Natural Science Foundation under grant No.33608911.
关键词 ZnO film SOL-GEL Seed layer ZnO film Sol-gel Seed layer
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