碳、碳氮和硼碳氮纳米管场发射性能的比较研究

Comparison of field emission of carbon,carbon nitride and boron carbon nitride nanotubes

采用高温热解法在860℃分别制备出了碳、碳氮和硼碳氮纳米管,提纯后利用丝网印刷工艺分别将它们制备成薄膜,并测试了它们的场发射性能.结果表明碳纳米管、碳氮纳米管和硼碳氮纳米管薄膜的开启电场分别为2.22,1.1和4.4V/μm,当电场增加到5.7V/μm时,它们的电流密度分别达到1400,3000μA/cm2和小于50μA/cm2.碳和碳氮纳米管薄膜的场增强因子分别为10062和11521.可见,碳氮纳米管的场发射性能优于碳纳米管,而硼碳氮纳米管的场发射性能比前两者要差.解释了这三种纳米管场发射性能差别的原因.

Carbon, CNx and BCN nanotubes were synthesized by pyrolysis at 860 ℃ and purified. Thin films of the purified samples were fabricated by a screen-printing method. The field emission effect of these films was compared. It was found that the turn-on field was 2.22,1.1 and 4.4 V/μm, and the current density at 5.7 V/μm was 1400,3000 and 〈 50 μA/cm^2 for C, CNx and BCN nanotubes, respectively. The electron field emission property of the CNx nanotubes was better than the carbon nanotubes while that of BCN nanotubes was the worst. The origin of the differences in field emission of these films was explained.