射频反应溅射Ge_xC_（1－x）薄膜的特性

Characteristics of Ge_xC_(1-x) Films Deposited by RF Reactive Sputtering in Ar/CH_4

射频反应溅射Ｇｅ_ｘＣ_（１－ｘ）薄膜的特性刘正堂，朱景芝，许念坎，郑修麟（西北工业大学材料科学与工程系，西安，７１００７２）［摘要］通过在Ａｒ＋ＣＨ４气体中的射频反应溅射法制备出ＧｅｘＣ（１－ｘ）薄膜。利用俄歇电子能谱、Ｘ射线衍射、光度计及硬度测定等...

GexC1-x films were prepared by RF reactive sputtering at deferent mixtures of Ar and CH4 The compositions structure and properties of the films have been investigated using Auger Electron Spectroscopy (AES), visible to near IR photometer and X-ray diffraction.(XRD)Experimental results show that the atomic ratio(Ge/C) of the films decreased with the increasing ofCH4/(Ar+CH4). The film is amorphous in structure and and its index can be varied between 1.8 and4.3 with the ratio change of CH4/(Ar+CH4). The hardness value of the film, guter than that ofGe and ZnS, grows with increase of the amount of C in it. They are promising films forantireflection and protection coatings.