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High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect

High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect
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摘要 Based on free carrier plasma dispersion effect, a 2 × 2 optical switch is fabricated in a silicon-on-insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach-Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04 dB and a response time of 496ns. Based on free carrier plasma dispersion effect, a 2 × 2 optical switch is fabricated in a silicon-on-insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach-Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04 dB and a response time of 496ns.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第12期3097-3099,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 60336010, the Special Funds for Major State Basic Research Project of China under Grant No G20000366, and the National High Technology Programme of China under Grant No 2002AA312060.
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