摘要
通过阳极氧化电压谱图(AVS);I-V特性和Fiske台阶电压测量,我们研究了Nb超导量子结构中AlOx-Al厚度对其特性的影响。发现AVS中AlOx-Al与Nb电极之间的界面陡度和I-V特性取决于AlOx-Al厚度,Nb|A|Ox-Al|Nb结的最小最佳沉积Al层厚度为7nm。由Fiske台阶电压,AVS中的Al峰和I-V特性的畸变,证实了结中Al/Nb间由常态Al而引起的亲近效应的存在,并用McMillan理论作了讨论。
The AlOx- ̄Al thickness influence on the characteristic in Nb superconducting quantum junction was studied by measuring AVS, I-V characteristic and Fiske step voltage. It was discovered that the interface sharpness between the AlOx-Al and Nb in AVS and I-V Characteristic depends on the AlOx-Al thickness and the minimal optimum thickness of deposition Al layer is 7 nm. By comparing Fiske step voltage, the Al peak in AVS and distortion I-V characteristic it is confirmed that the proximity effect by normal Al between the AlOx and Nb is existent.The result was compared with the McMillan theory.
出处
《量子电子学》
CSCD
1996年第4期336-340,共5页