掺钠钛酸铋薄膜的制备及主要性能的研究

Preparation and Main Properties of Sodium-substituted Bi_4Ti_3O_(12) Thin Films

采用金属有机溶液分解法(MOSD)在SiO2/p-Si(111)衬底上制备了Bi3.25Na2.25Ti3O12(BNaT)薄膜。利用X-射线衍射技术研究了薄膜的结构和结晶性,同时还研究了不同退火温度对漏电流、积累态电容、损耗因子的影响及薄膜的I-V、C-V和-εf性能。

Bi3.25 Na2.25 Ti3O12（BNaT） thin films were prepared on SiO2/p-Si（111） substrate by a metalorganic solution decomposition （MOSD） method. The structural characteristic and crystallization of the films were examined by X-ray diffraction. Effects of annealing temperature on leakage current, accumulation capacitance and dissipation factor were investigated. I-V, C-V and ε-f properties of the films were also studied.