自封闭低压硅场致发射二极管的研究

Self-Sealed Silicon Field Emitting Diode Operating at Low Voltage

本文首次利用硅片直接键合（ＳＤＢ）技术实现了具有一定真空度的自封闭硅微二极管．实验测得该４０×４０阵列场发射二极管的开启电压只有５Ｖ左右，发射电流在２５Ｖ时可达１０－４Ａ量级．文中还对键合形成的微真空腔的机理进行了详细的分析．

Based on silicon direct bonding(SDB) technology, a self-sealed micro diode with low vacuum is fabricated for the first time. The experiments show that the starting voltage of the diode is about 5 Volts,and the total emission current may reach 10￣(-4) A at about 25 V. The formation mechanisms of vacuum within the sealed cavity are also analyzed in detail.