期刊文献+

掺杂改性在微波介质陶瓷中的应用

Doping in the Preparation of Microwave Dielectric Ceramics
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摘要 综述了近年来微波介质陶瓷研究中掺杂改性的应用概况。掺加烧结助荆多用来降低微波介质陶瓷的烧结温度,取代常常用来调整材料的介电性能和温度系数。根据以往所得出的掺杂改性对陶瓷的影响,调节材料的性能以满足使用的需要是研究的热点。 This article reviews the recent research on doping and substitution of microwave dielectric ceramics (MWDC). Doping and substitution are commonly methods utilized to decrease the sintering temperature and adjust dielectric properties and temperature coefficient of MWDC respectively. Based on the previous knowledge of doping and substitution,we can accommodate our desired materials.
出处 《材料导报》 EI CAS CSCD 北大核心 2005年第F05期288-290,共3页 Materials Reports
基金 教育部留学归国人员基金(2003-14)
关键词 微波介质陶瓷 掺杂改性 取代 介电常数 microwave dielectric ceramics, doping, substitution, permittivity
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参考文献28

  • 1Watanabe T. Materials processing and design:grain-boundarycontrolled properties of fine ceramics Ⅱ. In:Ceramic Transactions, Edited by Niihara K, Ishizaki K, Isotani M. Westerville,OH: American Ceramic Society, 1994. 123.
  • 2Nowotny J. The science of ceramic interfaces. Edited by Nowotny J. Amsterdam, The Netherlands: Elsevier, 1991.79.
  • 3Raj R. Model for interface reaction control in superplastic deformation of non-stoichiometric ceramics [J]. Mater Sci Eng,1993 ,A166:89.
  • 4Langdon T G. The role of grain boundaries in high temperature deformation[J]. Mater Sci Eng, 1993,A166:67.
  • 5Heiao Y C,Wu L,Wei C C. Microwave dielectric properties of (Zr, Sn) TiO4 ceramic [J]. Mater Res Bule, 1988,23 (12):1687.
  • 6Huang Chengliang, Weng Minhung, et al. Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics[J]. Mater Chem Phys ,2001,71 ( 1 ) :17.
  • 7王宁,赵梅瑜,殷之文.微波介质陶瓷的中低温烧结[J].无机材料学报,2002,17(5):915-924. 被引量:30
  • 8吴顺华,王国庆,陈力颖.添加Sb_2O_5,ZnO和玻璃对(Zr_(0.7)Sn_(0.3))Ti_4陶瓷高频介电性能的影响[J].硅酸盐学报,2003,31(3):300-303. 被引量:2
  • 9Wang Zhengwen, Yao Xi, Zhang Liangying. CeO2-modified BiNbO4 microwave ceramics sintered under atmosphere[J]. Ceram Inter,2004,30 (7): 1329.
  • 10Sergey Kucheiko, Yeo Konghun, et al. Microwave dielectric properties of CcaTiO3-CaAl1/2 Nb1/2 O3 ceramics doped with Li3NbO4[J]. J Am Ceram Soc,2002,85(5):1327.

二级参考文献26

  • 1何进,杨传仁.微波介质陶瓷材料综述[J].电子元件与材料,1995,14(2):7-13. 被引量:38
  • 2李标荣 莫以豪 等.无机电介质[M].上海:上海科学技术出版社,1986.163-168.
  • 3[1]Jang S J, Schulze W A, Biggers J V. Low-firing capacitor dielectrics in the system Pb(Fe2/3W1/3)O3-Pb(Fe1/2Nb1/2)O3-Pb5Ge3O11 [J]. Am Ceram Soc Bull, 1983, 62(2): 216-218.
  • 4[2]Yonezawa M. Low-firing multilayer capacitor materials [J]. Am Ceram Soc Bull, 1983, 62(12): 1375-1383.
  • 5[3]Nakano M, Suzuki K. Low-temperature-fireable dielectric material Pb(Fe2/3W1/3)O3-(Pb,Ca)(Fe1/2Nb1/2)O3 for microwave use [J]. Jpn J Appl Phys,1 993, 32: 4314-4318.
  • 6[4]Kim H J, Kucheiko S. Microwave dielectrics in the (La1/2Na1/2)TiO3-Ca(Fe1/2Nb1/2)O3 system [J]. J Am Ceram Soc, 1997, 80(5): 1316-1318.
  • 7[5]Kucheiko S, Choi J W. Microwave characteristics of (Pb,Ca)(Fe,Nb,Sn)O3 dielectric materials [J]. J Am Ceram Soc, 1997, 80(11): 2937-2940.
  • 8[6]Takahashi H. Microwave dielectric properties of Ba(Mg1/2W1/2)O3-BaTiO3 ceramics [J]. Jpn J Appl Phys, 1997, 36: 5597-5599.
  • 9[7]Takahashi T. First-principles investigation of the phase stability for Ba(B1/3B2/3)O3 microwave dielectrics with the complex perovskite structure [J]. Jpn J Appl Phys, 2000, 39: 5637-5641.
  • 10[8]Shrout T R, Halliyal A. Preparatin of lead-based ferroelectric relaxor for capacitors [J]. Am Ceram Soc Bull, 1987, 66(4): 704-711.

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