摘要
采用固相反应法合成了具有四方钙钛矿结构的混合氧离子导体SmAl1-xZnxO3-δ（x=0，0．03，0．05，0．1）。通过直流四引线法对样品的电导率与温度和氧分压的关系进行了测量。结果表明，Zn^2＋掺杂显著提高了样品的电导率，与未掺杂的SmAlO3相比，其电导率提高了3～4个数量级。在所有样品中，SmAl0.95Zn0.05O3-δ的电导率最高，800℃时为3．5×10^-1S／m，活化能为0．43eV。在973-1273K范围内，SmAl1-xZnxO3-δ是一个氧离子和电子空穴的混合导体，但氧离子迁移数（t1）大于0．8，以离子导电为主。随着温度的下降，样品的氧离子迁移数逐渐增加。
The mixed oxide ion conductors SmAl1-xZnxO3-δ （x=0, 0. 03,0. 05,0. 1） with tetragonal perovskite structure are synthesized by using solid state reaction method. The electrical conductivity of the samples is measured as a function of temperature （973 -1273K） and oxygen partial pressure （10^2 -10^5 Pa） by means of the conventional four insert wire method. The results show that Zn-doping increases the electrical conductivity of the samples significantly. The electrical conductivity of doped SmAl1-xZnxO3-δ is about three to four orders of magnitude larger than that of undoped SmAlO3. SmAl0.95Zn0.05O3-δ has the highest conductivity of 3. 5 × 10^-1S/m at 800℃ in all the sampies, and the activation energy is 0. 43eV. It is found from the oxygen partial pressure dependence of electrical conductivity that SmAl0. 95 Zn0.05 O3-δ is a mixed conductor of oxide ion and hole from 973K to 1273K. Oxide ion transport number in SmAl1-xZnxO3-δ increases with decreasing temperature.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2005年第F11期277-279,共3页
Materials Reports
