芯片内互连线计算中的一种算法实现

Realization of Computation Method for On-Chip Interconnects

文章解决了将“变方向隐式方法的三维时域有限差分法”(3D AD I-FDTD)应用于高速芯片内互连线的电磁场计算中很多关键问题,包括源的产生方案及其数值结构,具体边界吸收条件的差分格式。特别是针对芯片互连线中的多层介质、多导体线的结构,提出了稀疏的矩阵模型和可变网格的划分。数值实验表明,对原有AD I-FDTD方法所做的这些改进,能够在保证适当精度的情况下提高计算速度。

Many key problems in application of 3-dimensional （3D） alternative direction implicit （ADI） finite difference time domain （FDTD） method to computation of electrodynamics of on-chip interconnects in high-speed IC＇s were solved, which include source generation scheme and its data structure, absorbing boundary condition and its difference format. Particularly, a sparse matrix model and a multigrid mesh structure were proposed for the multiconductor structure in multilayered dielectric media. A comparison of results between the amended ADI-FDTD method and the traditional one shows that all these amendments can increase the computational speed while maintairang accuracy.