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碳化硅陶瓷及其复合材料的热等静压氮化 被引量:2

NITRIDATION OF SiC CERAMICS AND SiC BASED COMPOSITESBY HOT ISOSTATIC PRESSING
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摘要 通过对SiC陶瓷、SiC-TiC复相陶瓷以及SiC晶须补强SiC基复合材料在氮气氛中进行高温氮化处理,成功地实现了这些材料的开口气孔与表面裂纹的愈合。有关研究表明:热等静压氮化工艺可以显著提高SiC陶瓷及其复合材料的抗弯强度,对断裂韧性也有较大的改善作用。对于热等静压(HIP)烧结SiC陶瓷(添加3%Al2O3,以质量计),在1850℃和200MPa氮气压力氮化处理1h后,其抗弯强度和断裂韧性分别由582MPa和5.7MPa·m(1/2)提高到907MPa和8.4MPa·m(1/2);对于预烧结密度为3.45g/cm3的SiC-TiC复相陶瓷,经HIP氮化处理后,其室温强度由354提高到686MPa,断裂韧性由6.9提高到7.9MPa·m(1/2);对于HIP烧结5%(vol)SiC晶须补强SiC基复合材料,HIP氮化处理后,其抗弯强度与断裂韧性分别高达931MPa和8.5MPa·m(1/2)。 SiC monolithic ceramics and SiC-TiC multiphase ceramics as well as SiC whisker-reinforced SiC based composites were nitrided by hot isostatic pressing in a N2 atmosphere at high temperatures. The possibility to heal surface cracks and open pores was experimentally verified by HIP-nitridation, and the influences of which on bulk density, flexural strength and fracture toughness were investigated. The results show that the sur face cracks and open pores can be healed and the mechanical properties can be obviously improved by HLP-nitridation. For hot isostatically pressed SiC ceramics with addition of 3%(mass) Al2O3, the flexural strength and fracture toughness are increased from 582MPa to 907 MPa and 5. 7MPa·m(1/2) to 8. 4MPa·m(1/2) respectively when HIP-nitridation is performed under 200 MPa in N2 at 1850 ℃ for 1h. For SiC-TiC multiphase ceramics with bulk density of 3. 45g/cm3, the room-temperature strength and fracture toughness are increased from 354MPa to 686MPa and 6.9MPa·m(1/2) to 7.9MPa·m(1/2) respectively by HIP-nitridation. For 5%(vol)SiC whisker-reinforced SiC based composites, the flexural strength and fracture toughness are as high as 931 Mpa and 8. 5MPa·m(1/2), respectively,after HIP-nitridation under a N2-pressure of 200 MPa at temperature of 1850 ℃ for 1h.
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 1996年第3期254-261,共8页 Journal of The Chinese Ceramic Society
关键词 复合材料 热等静压 氮化 碳化硅陶瓷 烧成 s: silicon carbide composites hot isostatic pressing nitridation
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参考文献5

  • 1佘继红,Ceram Int,1993年,19卷,5期,347页
  • 2佘继红,Sci Metall Mater,1993年,28卷,4期,523页
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