一种低电压CMOS带隙基准源的分析与设计

Analysis and Design of a CMOS Low Power Bandgap Reference

分析了一种无需低阈值电压器件的低压CMOS带隙基准源结构,通过具体电路分析和设计验证了该结构相比于传统的基准源结构可以大大降低电源电压。基于0.5um商用标准CMOS工艺,使用Hspice仿真该电路得到结果为:最低电源电压为1.45V、输出基准电压604mV、温漂12PPM/℃。

A detailed analysis of a low voltage CMOS bandgap reference structure which does not need the low threshold voltage device is presented. Circuit implementation and Hspice simulation show that the structure can be used to reduce power supply voltage to a greater degree than the conventional structure. The use of the 0.5gm standard CMOS process and of Hspice to simulate the circuit shows that the lowest power supply voltage is 1.45V and the output voltage reference is 604mV with a 12 PM/ ℃ temperature coefficient.