In∶Mn∶Fe∶LiNbO_3晶体非挥发性全息存储

NON-VOLATILE HOLOGRAPHIC STORAGE IN In∶Mn∶Fe∶LiNbO_(3) CRYSTAL

在Mn:Fe:LiNbO3(Mn:Fe:LN)中掺进不同摩尔分数In2O3,用提拉法生长In:Mn:Fe:LN晶体.测试了晶体的红外光谱,发现:3%In:Mn:Fe:LN晶体OH-吸收峰位置移到3 506 cm-1.用光斑畸变法测试晶体抗光致散射能力表明:In:Mn:Fe:LN晶体抗光致散射能力比Mn:Fe:LN晶体提高1～2个数量级.探讨了In:Mn:Fe:LN晶体OH吸收峰移动和抗光致散射能力增强的机理.以He-Ne激光作记录光,高压汞灯紫外光作开关光,In:Mn:Fe:LN晶体中一种杂质Fe充当较浅能级,另一种杂质Mn充当较深能级,以Mn:Fe:LN和1%In:Mn:Fe:LN晶体作为存储介质实现非挥发性存储.用双光子固定法测量了In:Mn:Fe:LN晶体的二波耦合衍射效率.研究了In:Mn:Fe:LN晶体的双光子全息存储机理.

By doping with different concentrations （in mole） of In^3＋ in Mn ： Fe ： LiNbO3（Mn ： Fe ： LN）, In ： Mn ： Fe ： LN crystals were grown by the Czochralski method. The crystals obtained were measured by infrared spectra, and the results show that the OH absorption peak of In ： Mn ： Fe ： LN was shifted to 3 506 cm^-1. The mechanism of the OH absorption peak shift was studied. The photo-scattering resistance ability of In ： Mn ： Fe ： LN crystals was measured by the light spot distortion observation method. The photo scattering resistance ability of 3 % （in mole）In ： Mn ： Fe = LN crystal was enhanced about 1-2 orders of magnitude greater than that of Mn ： Fe ： LN. The mechanism of enhancement of the photo-scattering resistance ability of In ： Mn ： Fe ： LN crystal was discussed based on the Li-site vacancy model. Using He - Ne laser beams as the recording light and an ultraviolet beam as the gating light, the dopant Fe and Mn in In ： Mn ： Fe ： LN crystal acting as shallower and deeper energy level respectively, Mn ： Fe ： LN and In ： Mn ： Fe ： LN crystals as the storage materials, non-volatile holographic storage were achieved. The two wave coupling diffraction efficiency of In ： Mn ： Fe ： I.N was measured by the twophoton fixed method. The two-photon holographic storage mechanism of triply - doped In 2 Mn ： Fe ： LN crystal was studied.