氢吸附导致的SiC表面金属化

Hydrogen adsorption induced metallization of SiC surface

文章报道了最近对氢吸附导致-βS iC(001)-3×2表面金属化的研究结果.提出了-βS iC(001)-3×2表面金属化的一种新机制:通过形成氢桥键(S i-H-S i复合结构)形成表面n型掺杂.该复合结构通过氢桥键增强了沟槽底部的弱结合的S i-S i二聚体,并向体系的导带提供电子.

We report our recent theoretical studies on the hydrogen-induced semiconductor surface metallization observed in β-SiC （001）-3 × 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridgebonds （ i. e. , Si - H - Si complex）. The hydrogen strengthens the weak Si - Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band.