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Si基CdTe复合衬底分子束外延研究 被引量：1

Mbe Growth of Si/CdTe(211) Composite Substrates
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摘要 文章引入晶格过渡的Si/ZnTe/CdTe作为复合外延基底材料,以阻挡Si/HgCdTe之间大晶格失配产生的高密度位错.通过对低温表面清洁化、面极性控制和孪晶抑制等的研究,解决了Si基CdTe分子束外延生长中诸多的技术难题.在国内首次采用分子束外延(MBE)的方法获得了大面积的Si基CdTe复合衬底材料,对应厚度为4～4.4μm Si/CdTe(211)样品双晶半峰宽的统计平均结果为83弧秒,与相同厚度的GaAs/CdTe(211)双晶平均水平相当. The composite substrates of lattice graded buffer layers of Si/ZnTe/CdTe for HgCdTe epitaxy are studied to suppress mismatch dislocations at Si/HgCdTe interface. The technical problems in CdTe growth on Si are solved, such as low temperature cleaning treatment of Si, controlling of polarity and twinning suppression. The composite substrates of Si/CdTe（211 ）B with large area are obtained. The average FWHM value of 83 arcsec of 4 -4.4μm Si/CdTe（211 ） B films is achieved, similar with the results on GaAs/CdTe for the same thickness.
作者 陈路 王元樟 巫艳 吴俊 于梅芳 乔怡敏 何力
机构地区 中国科学院上海技术物理研究所半导体材料器件研究中心
出处 《激光与红外》 CAS CSCD 北大核心 2005年第11期857-860,共4页 Laser & Infrared
关键词 硅基 碲镉汞 复合衬底 分子束外延 Si substrates HgCdTe MBE
分类号 TN304.25 [电子电信—物理电子学] TN304.054 [电子电信—物理电子学]
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参考文献7

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同被引文献11

  • 1魏彦锋,陈新强,曹妩媚.HgCdTe液相外延薄膜生长及缺陷表征[J].红外与激光工程,2006,35(3):294-296. 被引量：8
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  • 3Varesi J B,Bornfreund R E,Childs A C,et al.Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4” silicon substrates.J Cryst Growth,2001,30:566.
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激光与红外
2005年 第11期

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