期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

Nd掺杂Bi_4Ti_3O_(12)陶瓷样品的铁电、介电性能

Dielectric and ferroelectric properties of Nd substituted Bi_4Ti_3O_(12) ceramics
下载PDF
导出
摘要 层状钙钛矿铁电体材料Bi4-xNdxTi3O12 (x=0.0～0.9)陶瓷样品适量Nd掺杂可提高Bi4Ti3O12 (BIT)的铁电性能. 当掺杂量为0.6时,样品的剩余极化达到最大值. 样品的相变温度(tc)随掺杂量的增加而降低,当掺杂量大于0.6时, tc下降速率增大. 随着Nd含量的增加(x>0.6), 样品的弛豫程度明显提高. Nd掺杂降低了样品的氧空位浓度,提高了BIT样品的铁电性能. The dielectric and ferroelectric properties of Nd-doped Bi4Ti3O12 ceramics are investigated. The dependences of 2Pr and 2Ec on the Nd content are observed. 2Pr increases with doping, and maximizes at the Nd content of 0. 6, then decreases. 2Ec increases with Nd-doping gradually. The results show that the decrease of tc indicates the relief of lattice distortion. As the Nd content is higher than 0. 6, tc decreases faster and BNdT-x （x〉0. 6） exhibits typical relaxational characteristics. The dependence of dielectric loss on the Nd content indicates the oxygen vacancy concentration decreases and the mobility of domain wall increases with doping,which are responsible for the increase of 2Pr.
作者 陆文峰 毛翔宇 陈小兵
机构地区 扬州大学物理科学与技术学院
出处 《扬州大学学报（自然科学版）》 CAS CSCD 2005年第4期24-27,共4页 Journal of Yangzhou University：Natural Science Edition
基金 国家自然科学基金资助项目(10274066) 江苏省教育厅自然科学基金资助项目(01KJB140011)
关键词 Bi4Ti3O12陶瓷 ND掺杂 剩余极化 介电性能 Bi4Ti3O12 ceramics Nd-doping ferroelectrics properties dielectric properties
分类号 O482.54 [一般工业技术—材料科学与工程] TM271 [一般工业技术—材料科学与工程]
  • 相关文献

参考文献10

  • 1毛翔宇,陈小兵.高取向Bi_4Ti_3O_(12)陶瓷样品的制备[J].扬州大学学报（自然科学版）,2004,7(1):17-20. 被引量：2
  • 2SCOTT J F, ARAUJO C A P D. Ferroelectric memories [J]. Science, 1989, 246: 1400-1405.
  • 3PARK B H, KANG B S, BUS D, et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories[J]. Lett Nat, 1999, 401(14): 682-684.
  • 4IRIE H, MIYAYAMA M, KUDO T. Structure dependence of ferroelectric properties of bismuth layer-structured ferroelectric single crystals [J]. J Appl Phys, 2001, 90(8) : 4089-4094.
  • 5SUBBARAO E C. Ferroelectricty in Bi4Ti3O12 and its solid solutions [J].Phys Rev, 1961, 122(3): 804-807.
  • 6ROBERTSON J, CHEN C W, WARREN W L, et al. Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9 [J]. Appl Phys Lett,1996, 69(6):1704-1706.
  • 7MASUDA Y, MASUMOTO H, BABA A, et al. Crystal growth,dielectric and polarization reversal properties of Bi4Ti3O12 single crystal [J]. Jpn J Appl Phys, 1992, :31: 3108-3112.
  • 8NOGUCHI Y, MIYAYAMA M,KUDO T. Large remanent polarization of vanadium-doped Bi4Ti3O12[J].Appl Phys Lett, 2001,78(13):1903-1905.
  • 9LEE J K, KIM C H, SUH H S,et al. Correlation between internal stress and ferroelectric fatigue in Bi4-xLaxTi3O12 thin films [J]. Appl Phys Lett, 2002, 80(19): 3593-3595.
  • 10MELGAREJO R E, TOMAR M S,BHASKAR S, et al. Large ferroelectric response in Bi1-xNdxTi3O12 films prepared by sol-gel process [J]. Appl Phys Lett, 2002, 81(14): 2611-2613.

二级参考文献13

  • 1[13]YAMAGUCHI M, NAGATOMO T. Effect of grain size on Bi4Ti3O12 thin film properties [J]. Jpn J Appl Phys, 1998, 37:5166～5170
  • 2[1]SCOTT J F, ARAUJO C A P D. Ferroelectric memories [J]. Science, 1989, 246: 1400～1405
  • 3[2]WITHERS R L, THOMPSON J G, RAE A D. The crystal chemistry underlying ferroelectricty in Bi4Ti3O12, Bi3TiNb3O9, and Bi2WO6 [J]. J Solid State Chem, 1991, 94:404～417
  • 4[3]NOGUCHI Y, MIYAYAMA M, KUDO T. Large remanent polarization of vanadium-doped Bi4Ti3O12 [J]. Appl Phys Lett, 2001, 78(13):1903～1905
  • 5[4]SHIMAKAWA Y, KUBO Y, TAUCHI Y, et al. Crystal and electronic structures of Bi4-xLaxTi3O12 ferroelectric materials [J]. Appl Phys Lett, 2001, 79(17):2791～2793
  • 6[5]SHIMAZU M, TANAKA J, MURAMATSU K, et al. Phase transition in the family LaxBi4-xTi3O12: in relation to lattice symmetry and distortion [J]. J Solid State Chem, 1980, 35:402～406
  • 7[6]WANG D S, YU T, HU A, et al. Impact of forming gas annealing on the fatigue characteristics of ferroelectric SrBi2Ta2O9 thin films [J]. Appl Phys Lett, 2001, 79(14):2237～2239
  • 8[7]MELGAREJO R E, TOMAR M S, BHASKAR S, et al. Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol-gel process [J]. Appl Phys Lett, 2002, 81(14): 2611～2613
  • 9[8]MASUDA Y, MASUMOTO H, BABA A, et al. Crystal growth dielectric and polarization rcversal properties of Bi4Ti3O12 single crystal [J]. Jpn J Appl Phys, 1992, 31:3108～3112
  • 10[9]YAMGUCHI M, NAGATOTO T, MASTUDA Y. Preparation of Bi4Ti3O12/Bi2SiO5/Si structures derived by metal organic decomposition technique [J]. Jpn J Appl Phys, 2001, 40:5559～5562

共引文献1

扬州大学学报（自然科学版）
2005年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部