1[1]M. Xu, C. Tan, Y. He, et. al, "A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure" Solid State Electron. 1994,37, pp31-36
2[2]C. Tan, M. Xu, et al, "Application of the Difference Subthreshold Swing Analysis to study generation interface trap in MOS structures due to Fowler-Nordheim aging", IEEE Elecron Device lett. (EDL), 1994, 15(7),pp257-259
3[3]Mingzhen Xu et. al, "Oxide Current Relaxation Spectroscopy in tunneling Metal-Oxide-Semiconductor structures under high field stress" , J.Appl. Phys. Vol. 7,No.11, pp.6924-6929, 1990
4[4]Mingzhen Xu et.al, "A new technique for determining the capture cross-section of the oxide traps in MOS structures", IEEE Electron letters (EDL), Vol. 12, No.3,pp122-124, 1991
5[5]Changhua Tan, Mingzhen Xu, et. al, "Oxide Trap Relaxation Spectroscopy: A new difference method to determine trap in oxidized silicon", J.Appl. Phys. Vol.77, No.6, pp.2576-2581, 1995
6[6]Mingzhen Xu, Changhua tan, et. al, "Dynamic Oxide Voltage Relaxation Spectroscopy", IEEE Trans. Electron Devices, 43(4), pp628-635, 1996
7[7]Changhua tan, Mingzhen Xu, and Jinyan wang,"Proportional Difference Operator Method and its application to studying the saturation characteristics of MOSFET' s", Electron Lett. 34(21), pp.2067-2069,1998
8[8]Mingzhen Xu, Changhua Tan, and Yandong He, Bing Xie, Jinyan Wang and Liqi Wang, "Proportional Difference Method for determination of the threshold voltage and the effective inversion carrier mobility of MOSFET's", ICSICT' 98 1998
9[9]C.H.Tan, M.Z.Xu and Z.O.Wang, "Proportional Difference Method and its application in studying subthreshold behavior of MOSFETs", Solid State Electronics, 44(6), 1059-1067, 2000
10[10]M.Z.Xu, C.H.Tan, C.Y.Yang, "Investigation of the proportional difference characteristics of MOSFETs",International Journal of Electronics (IJE). 88 (4), pp.383-393, 2001
