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拉通型雪崩光电管等效电路的研究

Research on Reach-through Avalanche Photodiode Equivalent Circuit
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摘要 从拉通型雪崩光电管的结构入手,介绍了各层的物理性质,应用载流子电荷的速度方程和连续性方程,通过归一化处理,建立拉通型雪崩光电管的等效电路模型.在PSPICE中创建了相应的子电路,仿真结果与实测数据比较得出,该模型准确地模拟出了雪崩光电管的击穿电压以及响应电流的变化趋势. Beginning with the structure of the reach-through APD, this paper introduces the physical characteristics of the layers respectively. By using the method of simulating one dimension of the device, by applying velocity and continuity equations, and by the dealing of normalization, the model of the reach-through APD equivalent circuit is created. According to the equivalent circuit, a sub-circuit is built in PSPICE. Compared with the data obtained by testing, the emulation results show the broken down voltage and the trend of response current correctly.
出处 《湖南工程学院学报(自然科学版)》 2005年第4期12-15,共4页 Journal of Hunan Institute of Engineering(Natural Science Edition)
关键词 拉通型雪崩光电管 仿真 等效电路 reach-through APD simulation equivalent circuit
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参考文献3

  • 1W. Chen,S. Liu. PIN avalanche photodiodes model for circuit simulation[J ]. IEEE Journal of Quantum Electronics, 1996,32(12) :2105 - 2111.
  • 2Data Sheet. High Speed Solid State Detectors for Fiber Optic and Very Low Light - Level Applications; Silicon Avalanche Photodiodes C30902E, C30902S, C30921S[M]. EG&G CANADA LTD. , Optoelectronic Division,1991.
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