磁控反应溅射制备择优取向氮化铝薄膜

Preferential orientation AlN films by RF reactive magnetron sputtering

以氮气为反应气体,采用磁控反应溅射方法制备了择优取向的氮化铝薄膜.通过XRD测试发现,靶基距、溅射气压影响薄膜的择优取向:大的靶基距及高的溅射气压利于(100)面择优取向,小的靶基距和低的溅射气压利于(002)面择优取向.通过对沉积速率的分析发现,高的沉积速率利于(002)面择优取向,低的沉积速率利于(100)面择优取向.研究结果表明:沉积速率影响了核在衬底表面的生长方向,从而影响了各晶面的生长速度,最终决定薄膜的择优取向.

Preferential orientation AIN films have been successfully prepared by RF reactive magnetron sputtering. The effects of substrate-target distance, working pressure on the preferential orientation of the AIN films are studied by using XRD. It is found that with long substrate-target distance and high working pressure, a low deposition rate orientation films （100） are easily obtained. On the contrary, with a short distance and low pressure, a high deposition rate orientation films （002） are obtained. The orientation films （002） can be formed easily at high deposition rate and （001） at low deposition rate. It is concluded from the analysis that the deposition rate influences the orientation of nuclei on the substrate, and then growth speed, ultimately the orientation film.