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ICP-AES法测定电镀硫酸铜中杂质元素 被引量:2

Determination of Trace Element Impurities in Copper Sulphate for Electroplating by ICP - AES
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摘要 对电感耦合等离子体原子发射光谱法(ICP-AES法)测定电镀硫酸铜中7种杂质元素的含量进行了 研究,考察了基体元素铜对杂质元素的光谱和非光谱干扰以及基体浓度对杂质元素谱线信背比和检出限的影响。 相对标准偏差<5%,样品加标回收率为96%-106%。 A method of determining 7 trace elemental impurities in copper sulfate for electroplanting by inductively coupled plasma - atomic emission spectrometry is reported. The spectral and non - spectral interference of copper matrix, the effect of the matrix concentration to the signal - to - noise ratio and the detection limits of the determined elements were investigated. Real sample was analyzed by the method with RSD of 〈 5% and recovery of 96% - 106%.
出处 《铜业工程》 CAS 2005年第4期57-58,31,共3页 Copper Engineering
关键词 电感耦合等离子体原子发射光谱 电镀硫酸铜 杂质 Inductively coupled plasma -atomic emission spectrometry copper sulf te for electroplanting Impurities
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