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Ag/Bi_4Ti_3O_(12)栅铁电场效应管ID-VG特性双曲模型

Hyperbola Model of I _D- V _G Characteristics of Ferroelectric Field-effect-transistors with Ag/Bi_4Ti_3O_ 12 Gate
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摘要 在理论分析的基础上,结合铁电材料特性及实验数据,提出了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管转换(ID-VG)特性的双曲模型并进行了数值模拟。该模型不但与阈值电压、沟道饱和电流等器件参数相关而且充分反映了剩余极化、矫顽电压等铁电栅介质极化特性对器件ID-VG特性的影响。结果表明:模拟曲线与实验曲线基本一致,能较好地模拟和描述铁电场效应晶体管的ID-VG特性。 A hyperbola model of ID-VG characteristics of ferroelectric field-effect-transistors （FFETs） with Ag/Bi4Ti3O12 gate was brought forward, which is based on the theory of MOS device and the experimental data of the FFET. The model comprises the main parameters such as threshold voltage and the ferroelectric polarization properties. The simulated ID-VG curves were consistent with the curves obtained el could characterize the ID-VG properties of the by measurement ,which indicated that the mod ferroelectric field-effect-transistors properly.
作者 王华 任鸣放
机构地区 桂林电子工业学院信息材料科学与工程系
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2005年第4期445-449,共5页 Research & Progress of SSE
基金 广西自然科学基金(0236062)项目
关键词 铁电场效应晶体管 ID-VGc特性 数学模型 数值模拟 FFET ID-VG characteristics model simulation
分类号 TN304.055 [电子电信—物理电子学]
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参考文献10

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二级参考文献6

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固体电子学研究与进展
2005年 第4期

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